Ferroelectric (FE) hafnium oxides (HfO 2), such as hafnium zirconium oxide (HZO), are promising thin film ferroelectric materials for nonvolatile memory applications, which feature fast speed, 1–9 long retention, 1,10 high endurance, 10–12 and a CMOS compatible fabrication process. 13,14 The time response of polarization …
Hafnium zirconium oxide (HZO) is an emerging ferroelectric material discovered in 2011, which exhibits CMOS compatibility due to the utilization of high-k dielectric HfO2 in CMOS transistors. ... This advancement will enable the development of various devices, including high-speed optical modulators. Consequently, HZO-based …
Highly enhanced polarization switching speed in HfO 2-based ferroelectric thin films via a composition gradient strategy. Adv Funct Mater 2023 ... Cao K, Chen Y, et al. …
Abstract: The ferroelectric (FE) and anti-ferroelectric (AFE) properties of hafnium zirconium oxide (HZO) are investigated systematically down to 3 nm. The ferroelectric polarization, switching speed and the impact of metal electrodes, such as atomic layer deposited (ALD) TiN and WN versus sputtered W, are studied.
The aim of this work is to study the corrosion and electrochemical behavior, physical and mechanical properties of alloys based on Ni–Re alloyed with zirconium, palladium, tungsten and hafnium, and the process of high-speed anodic dissolution of these alloys for the subsequent development of a method for their electrochemical …
The hafnium–zirconium oxide ... Yen S.S. Low power 1T DRAM/NVM versatile memory featuring steep sub-60-mV/decade operation, fast 20-ns speed, and robust 85 °C-extrapolated 10 16 endurance; Proceedings of the 2015 Symposium on VLSI Technology (VLSI Technology); Kyoto, Japan. 16–18 June 2015; ...
Fluoride-based lanthanide-doped nanoparticles (LDNPs) featuring second near-infrared (NIR-II, 1000–1700 nm) downconversion emission for bioimaging have attracted extensive attention. However, conventional LDNPs cannot be degraded and eliminated from organisms because of an inert lattice, which obstructs bioimaging …
PDF | On Apr 8, 2021, X. Lyu and others published Dynamics Studies of Polarization Switching in Ferroelectric Hafnium Zirconium Oxide | Find, read and cite all the research you need on ResearchGate
* Fractions of the sand are turned into sponge, then zirconium metal or zircaloy and hafnium -- used in control rods at some nuclear reactors to slow down or speed up the fission process. The ...
high operating speed [3]. For the last three decades, more than 1000 papers have been published every year on Ti carbides and nitrides (Figure 1). Although melting temperatures for carbides and nitrides of zirconium and hafnium are higher than those for Ti, they are studied less and their applications are currently limited.
T44 98-4- 2019 2019 T T Ferroelectric and Anti -Ferroelectric Hafnium Zirconium Oxide: Scaling Limit, Switching Speed and Record High Polarization Density X. Lyu1, M. Si1,*, X. Sun2, M. A. Capano1, H. Wang2, andP. D. Ye1,** 1School of Electrical and Computer Engineering and 2School of Materials Science and Engineering, Purdue …
The polarization switching speed of ferroelectric (FE) hafnium zirconium oxide (HZO) is studied with the device size down to sub-μm in lateral dimension. Ultrafast measurement of transient switching current on metal-ferroelectric-metal (MFM) device with a crossbar array or a single crossbar structure is performed to analyze the switching dynamics. A record …
Request PDF | On Apr 2, 2024, Jae Young Kim and others published High-Performance Ferroelectric Thin Film Transistors with Large Memory Window Using Epitaxial Yttrium-Doped Hafnium Zirconium Gate ...
[191] Lyu X, Si M, Sun X et al 2019 Ferroelectric and anti-ferroelectric hafnium zirconium oxide: Scaling limit, switching speed and record high polarization …
The back-end-of-line (BEOL) processing compatibility of sputtered ferroelectric hafnium zirconium oxide (HZO) thin films is demonstrated on sputtered TiN/HZO/TiN thin-film ferroelectric capacitors. This promises an easy integration of HfO2-based ferroelectrics for applications such as non-volatile memories. It is found that the sputtering pressure can …
When the stirring speed was in the range of 135~155 r·min⁻¹, the extraction rates of zirconium and hafnium had a plateau region which did not vary with the stirring speed.
The dynamic compression of brittle materials has been experimentally measured using the split-Hopkinson pressure bar (SHPB) method [22], dynamic mechanical analysis (DMA) [23], and Kolsky torsion bar (KTB) method [24].The SHPB test has gained wide attention in understanding the dynamic mechanical response to predict the failure …
Abstract: The ferroelectric (FE) and anti-ferroelectric (AFE) properties of hafnium zirconium oxide (HZO) are investigated systematically down to 3 nm. The …
To scale the ferroelectric random access memory (FeRAM) technology toward 28 nm or beyond, it is critical to develop stacked capacitor (with sufficient surface area) to allow good sense margin for the 1-transistor- 1-capacitor (1T1C) bit cell. Therefore, to enable 3-D integration in back-end-of-line (BEOL) process, it is essential to optimize the fabrication …
In this work, we investigate the ferroelectricity of stacked zirconium oxide and hafnium oxide (stacked HfZrO) with different thickness ratios under metal gate stress and simultaneously evaluate the electrical reliability of stacked ferroelectric films. Based on experimental results, we find that the stacked HfZrO films not only exhibited excellent …
The discovery of a stable orthorhombic ferroelectric phase in HfO 2, which was induced through the doping of various materials, has created new pathways for integrating ferroelectric device concepts, such as memories, and has brought an important contribution to the downscaling of the electronic devices [1].In recent years, extensive …
Zirconium and hafnium are contained in zircon at a ratio of about 50 to 1. Zircon is a coproduct or byproduct of the mining and processing of heavy-mineral sands for the titanium minerals, ilmenite and rutile, or tin minerals. The major end uses of zircon are refractories, foundry sands (including investment casting), and ceramic opacification. ...
The FESEM analysis of the annealed hafnium oxide films was carried out, and no significant changes in the surface morphology were observed, as shown in Fig. 2 (a–d). However, the EDS spectra of the films show the presence of Hf and O peaks along with the constituents of the FTO substrate (See Fig. S2 (a–d) of Supplementary …
Highly enhanced polarization switching speed in HfO 2-based ferroelectric thin films via a composition gradient strategy. Adv Funct Mater 2023 ... Cao K, Chen Y, et al. Optimization of ferroelectricity and endurance of hafnium zirconium oxide thin films by controlling element inhomogeneity. Journal of Advanced Ceramics, 2024, 13(7): 1023-1031 ...
nonvolatile memory applications, which feature fast speed, 1–9 long retention,1,10 high endurance,10–12 and a CMOS compatible fabrica-tion process.13,14 The time response of polarization switchingis crucial to evaluate the potential operation speed of FE HfO 2 based ferroelec-tric devices, such as ferroelectric field-effect transistors (Fe-
T44 98-4- 2019 2019 T T Ferroelectric and Anti -Ferroelectric Hafnium Zirconium Oxide: Scaling Limit, Switching Speed and Record High Polarization Density X. Lyu1, M. …
Zirconium and hafnium have similar atomic radii (1.45 Å and 1.44 Å, respectively), and similar valence electron configurations ... SHS reactor, (2) data logger, (3) initial sample installed with thermocouples and definition of propagation speed, (4) vacuum pump, and (5) Ar gas.
Here, we show the optical phase shift induced by ferroelectric Hf 0.5 Zr 0.5 O 2. We observed a negative change in refractive index at a 1.55 μm wavelength in a …
In this work, we report on an ultrafast direct measurement on the transient ferroelectric polarization switching in hafnium zirconium oxide with a crossbar metal-insulator-metal (MIM) structure. A record low sub-nanosecond characteristic switching time of 925 ps was achieved, supported by the nucleation limited switching model. The impact of electric …
Ferroelectric and Anti-Ferroelectric Hafnium Zirconium Oxide: Scaling Limit, Switching Speed and Record High Polarization Density Abstract: The ferroelectric (FE) and anti-ferroelectric (AFE) properties of hafuium zirconium oxide (HZO) are investigated systematically down to 3 nm. The ferroelectric polarization, switching speed …
